실리카졸의 이온전도도 변화에 따른 사파이어 웨이퍼의 연마 특성

서지정보

ㆍ발행기관 : 한국재료학회 ㆍ수록지정보 : 한국재료학회지 / 25권 / 1호
ㆍ저자명 : 나호성, 조경숙, 이동현, 박민경, 김대성, 이승호

목차

1. 서 론
2. 실험 방법
3. 결과 및 고찰
4. 결 론
감사의 글
References

영어 초록

CMP(Chemical Mechanical Polishing) Processes have been used to improve the planarization of the wafers in the semiconductor manufacturing industry. Polishing performance of CMP Process is determined by the chemical reaction of the liquid sol containing abrasive, pressure of the head portion and rotational speed of the polishing pad. However, frictional heat generated during the CMP process causes agglomeration of the particles and the liquidity degradation, resulting in a non-uniform of surface roughness and surface scratch. To overcome this chronic problem, herein, we introduced NaCl salt as an additive into silica sol for elimination the generation of frictional heat. The added NaCl reduced the zata potential of silica sol and increased the contact surface of silica particles onto the sapphire wafer, resulting in increase of the removal rate up to 17 %. Additionally, it seems that the silica particles adsorbed on the polishing pad decreased the contact area between the sapphire water and polishing pad, which suppressed the generation of frictional heat.

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