리튬 이차전지에서 Si 음극박막의 스퍼터링 증착조건에 따르는 구조적, 전기화학적 특성 연구

서지정보

ㆍ발행기관 : 한국재료학회 ㆍ수록지정보 : 한국재료학회지 / 19권 / 2호
ㆍ저자명 : 주승현, 이성래, 조병원, 조원일

영어 초록

This study investigated the dependence of the various sputtering conditions (Ar pressure: 2~10 mTorr, Power: 50~150 W) and thickness (50~1200 nm) of Si thin film on the electrochemical properties, microstructural properties and the capacity fading of a Si thin film anode. A Si layer and a Ti buffer layer were deposited on Copper foil by RF-magnetron sputtering. At 10 mTorr, the 50 W sample showed the best capacity of 3323 mAh/g, while the 100 W sample showed the best capacity retention of 91.7%, also at 10 mTorr. The initial capacities and capacity retention in the samples apart from the 50W sample at 10 mTorr were enhanced as the Ar pressure and power increased. This was considered to be related to the change of the microstructure and the surface morphology by various sputtering conditions. In addition, thinner Si film anodes showed better cycling performance. This phenomenon is caused by the structural stress and peeling off of the Si layer by the high volume change of Si during the charge/discharge process.

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