양면동시증착 열선-CVD를 이용한 a-Si:H/c-Si 이종접합 태양전지 제조

서지정보

ㆍ발행기관 : 한국재료학회 ㆍ수록지정보 : 한국재료학회지 / 21권 / 12호
ㆍ저자명 : 정대영, 송준용, 김경민, 이희덕, 송진수, 이정철

영어 초록

The a-Si:H/c-Si hetero-junction (HJ) solar cells have a variety of advantages in efficiency and fabrication processes. It has already demonstrated about 23% in R&D scale and more than 20% in commercial production. In order to further reduce the fabrication cost of HJ solar cells, fabrication processes should be simplified more than conventional methods which accompany separate processes of front and rear sides of the cells. In this study, we propose a simultaneous deposition of intrinsic thin a-Si:H layers on both sides of a wafer by dual hot wire CVD (HWVCD). In this system, wafers are located between tantalum wires, and a-Si:H layers are simultaneously deposited on both sides of the wafer. By using this scheme, we can reduce the process steps and time and improve the efficiency of HJ solar cells by removing surface contamination of the wafers. We achieved about 16% efficiency in HJ solar cells incorporating intrinsic a-Si:H buffers by dual HWCVD and p/n layers by PECVD.

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