High‑speed growth of high‑quality polycrystalline diamond films by MPCVD

서지정보

ㆍ발행기관 : 한국탄소학회 ㆍ수록지정보 : Carbon letters / 33권 / 7호
ㆍ저자명 : Kai Chen, Tao Tao, Wenxiao Hu, Yucong Ye, Kaiwen Zheng, Jiandong Ye, Ting Zhi, Xiwei Wang, Bin Liu, Rong Zhang

목차

High-speed growth of high-quality polycrystalline diamond films by MPCVD
Abstract
1 Introduction
2 Experimental details
3 Results and discussion
4 Conclusions
Acknowledgements
References

영어 초록

High-quality diamond films have attracted extensive attentions due to their excellent optical and electrical properties. However, several issues, such as random orientation, stress accumulation, and slow growth rate, severely limit its applications. In this paper, high-quality polycrystalline diamond films with highly ordered (100) orientation were prepared by microwave plasma chemical vapor deposition. The effects of growth parameters on the microstructure, quality and residual stress of diamond films were investigated. Experimental results indicate that relatively high temperature at low methane concentration will promote the formation of (100) oriented grains with a low compressive stress. Optimized growth parameters, a methane concentration of 2% along with a pressure of 250 Torr and temperature at 1050 ℃, were used to acquire high growth rate of 7.9 μm/h and narrow full width at half maximum of Raman peak of 5.5 cm− 1 revealing a high crystal quality. It demonstrates a promising method for rapid growth of high-quality polycrystalline diamond films with (100) orientation, which is vital for improving the diamond related applications at low cost.

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