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목차

1. Introduction . . . . . . . . . . . . . . . . 3
2. Optical Property of ZnO nanowire . . 4
3. Anodic Aluminum Oxide(AAO) . . . . 5
4. Atomic _badtags Deposition(ALD) . . . . 6
5. Fabrication of New nanostructure. . .10

본문내용

1. Introduction

ZnO is a semiconductor material with a large binding energy of 60 meV and wide band gap of 3.37 eV. Thus ZnO nanowires have many novel magnetic, electrical and optical properties. Therefore, ZnO nanowires have been of great interest. Various approaches were applied to synthesize ZnO nanowires, for instance, vapor-phase method, rapid thermal evaporation , sputter deposition, template-assisted growth , vapor-liquid-solid method, Anodic Aluminum Oxide, atomic layer deposition and chemical vapor deposition. There are many research with ZnO and it`s application. Although there are something doped ZnO nanowire. But there aren`t quantum dot imbeded inside ZnO nanowire.

참고 자료

-[1] The optical properties of one-dimensional ZnO: A first-principles study
Y.R. Yang a,b, X.H. Yan a,c,*, Y. Xiao a, Z.H. Guo a College of Science, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China b Physics Laboratory Center, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China ,c Department of Physics, Xiangtan University, Hunan, Xiangtan 411105, China
-[2] Our 4th Class print
-[3] Synthesis of ZnO nanowire and application in devices. JM.Hong, HJ.Lee, Kisti.
-[4] F abrication and characterization of anodic aluminum oxide template Xin Wang*, Gao-Rong Han Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang 310027, China
-[5] "Nanostructures and nanomaterials" written by Guozhong Cao, University of Wasinton USA
-[6] Applications of atomic layer deposition to nanofabrication and emerging nanodevices Hyungjun Kim ⁎., Han-Bo-Ram Lee, W.-J. Maeng,Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, South Korea
-[7] ZnO layers grown by Atomic Layer Deposition: A new material for transparent conductive oxide M. Godlewski a,b,⁎., E. Guziewicz a, G. ŁŁuka a, T. Krajewski a, M. ŁŁukasiewicz a,b, ŁŁ. Wachnicki a,b,A. Wachnicka a,b, K. Kopalko a, A. Sarem c, B. Dalati c,a Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, Warsaw, Poland,b Department of Mathematics and Natural Sciences, College of Science, Cardinal Stefan Wyszyńński University, Warsaw, Poland,c Department of Physics, Faculty of Science, Tishreen University, Latakia, Syria
-[8] Construction of an atomic layer deposition system for nano-device applications S.J. Noh *, S.K. Lee, E.H. Kim, Y.J. Kong, Department of Applied Physics, Dankook University, Seoul 140-714, Republic of Korea
-[9] Google website image
-[10] Fabrication of epitaxial ZnO films by atomic-layer deposition with interrupted flow Ching-Shun Ku a, Jheng-Ming Huang b, Chih-Ming Lin b,⁎., Hsin-Yi Lee a,c,⁎.
aNational Synchrotron Radiation Research Center, 101 Hsin-Ann Road, Hsinchu Science Park, Hsinchu 30076, Taiwan b Department of Applied Science, National Hsinchu University of Education, Hsinchu 300, Taiwan c Department of Materials Science, National Chiao Tung University, Hsinchu 300, Taiwan