[서울시립대 반도체소자] 1단원 노트정리 - e's and h's in SCD(Semiconductor)s

소개글

ㄱㅇ교수님이 과제로 줄곧 내주곤 하시는 노트정리입니다!
손글씨로 내야 하지만 제가 악필이어서... 워드 파일로 변환했습니다.
약자를 많이 사용했습니다!
예시: definition -> def. , condition -> cond. , purpose -> purp. , proof -> pf. , confer -> cf. , electron -> e,
어떤 내용이든 정의, 조건, 목적 등의 항목들을 기준으로 정리하고자 노력했습니다.

목차

없음

본문내용

1. e's and h's in SCD(Semiconductor)s
1-1. Silicon Crystal structure
○unit cell of SCD
*def.) diamond structure ← 4 valence e's
lattice constant = 5.43 Angstrom
atomic density: 5E+22 [atoms/cm^3]
△Miller indices
*def.) (a b c) form, indicating the lattice plane. The pair of 3 numbers corresponds to the normal vector of the plane.
*cf.) [a b c] indicates the direction in the crystal normal to the (a b c) plane
*purp.) the direction of the cutting edge affects atoms' density, which determines mobility and performance of SCDs.
○Silicon
△combination of e & h
bandgap E = 1.1 eV
△E band model
*def.) E hand of e is a group of adjacent E states of e
only the bands of the most outer shell contributes to the conductivity.
differs with temperature ← atomic radius difference

1-2. Charge carriers of SCD
○E band diagram
△KE[Kinetic Energy]
E | E > E_C = conduction e KE
E | E < E_V = h KE
E change do not involve the actual movement of e

참고 자료

없음