EUV 기술 개요

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EUV 기술 개요

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본문내용

◇ Electromagnetic spectrum
Visible is 400 - 700nm (1.7 to 3eV)
UV down to about 170 nm (7eV)
VUV- Vacuum UV (starts where N2 is absorbing) then there is FUV (far UV) & EUV
EUV/soft x-ray, 2-50nm
47nm is the λ for the Ne-like-Ar X-ray Laser (capillary discharge laser).
But for EUV lithography, it is at 13.5nm (92eV).
Why EUV Lithography?

<중 략>

5. Resist for EUV lithography
The EUV absorbance in organic materials occurs
by inner-shell electrons < differently from optical lithography
6. Contamination and damage to EUV optics
Debris with low velocity will deposit to the mirrors, causing contamination. (debris for Sn or Li source, not for Xe gas source)
Debris with high velocity could damage the optics by sputtering material off the lenses.

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