[레포트] 반도체 공정 및 응용 HW#1

목차

1. Comparison of conventional MOSFET and Fin FET (Including feature, structure, working principle, fabrication sequence, etc.)
2. Comparison of SOI and Bulk FinFET (Including features, structure, Pros &Cons, etc.)
3. Reference Site

본문내용

Most commonly used Si-based MOSFETs have the above structure. At the top, at the bottom, you can electrically separate the gate from the Semiconductor channel. There is an oxide layer.In other words, the voltage at the gate is separated from the semiconductor part below by a subconductor called Oxide. Ideally, only an electric field is created between the gate and the channel, but there is no current. (However, there may actually be some leak current.) Oxide materials are mostly dielectric.
If the (+) voltage is applied to the gate terminal with the source terminal grounded, an electric field is formed in the lower direction and a (-) area is formed below the oxide membrane.

참고 자료

https://www.techdesignforums.com
http://cfile4.uf.tistory.com
https://cdn.sparkfun.com
https://pdfs.semanticscholar.org/2855/840c4fe4a953eaddf0086d4c33ba17a20944.pdf
https://semiwiki.com/x-subscriber/stmicroelectronics/2891-the-alternative-to-finfet-fd-soi/